Photodiode

Photodiode with incident flux input port

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• Simscape / Electrical / Sensors & Transducers

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Description

The Photodiode block represents a photodiode as a controlled current source and an exponential diode connected in parallel. The controlled current source produces a current I_p that is proportional to the radiant flux density:

Ip = DeviceSensitivity · RadiantFluxDensity

(1)

where:

• DeviceSensitivity is the ratio of the current produced to the incident radiant flux density.

  • If you select Specify measured current for given flux density for the Sensitivity parameterization parameter, the block calculates this variable by converting the Measured current parameter value to units of amps and dividing it by the Flux density parameter values.

  • If you select Specify current per unit flux density for the Sensitivity parameterization parameter, this variable is defined by the Device sensitivity parameter value.

• RadiantFluxDensity is the incident radiant flux density.

To model dynamic response time, use the Parameterization parameter in the Junction capacitance tab to include the diode junction capacitance in the model.

The exponential diode model provides the following relationship between the diode current I and the diode voltage V:

$$I=IS\cdot \left(e^{\frac{qV}{Nk{T}_{m1}}}-1\right)$$

where:

• q is the elementary charge on an electron (1.602176e–19 Coulombs).

• k is the Boltzmann constant (1.3806503e–23 J/K).

• N is the emission coefficient.

• IS is the saturation current, which is equal to the Dark current parameter value.

• T_m1 is the temperature at which the diode parameters are specified, as defined by the Measurement temperature parameter value.

When (qV / NkT_m1) > 80, the block replaces $$e^{\frac{qV}{Nk{T}_{m1}}}$$ with (qV / NkT_m1 – 79)e⁸⁰, which matches the gradient of the diode current at (qV / NkT_m1) = 80 and extrapolates linearly. When (qV / NkT_m1) < –79, the block replaces $$e^{\frac{qV}{Nk{T}_{m1}}}$$ with (qV / NkT_m1 + 80)e^–79, which also matches the gradient and extrapolates linearly. Typical electrical circuits do not reach these extreme values. The block provides this linear extrapolation to help convergence when solving for the constraints during simulation.

When you select Use dark current and N for the Diode parameterization parameter, you specify the diode in terms of the Dark current and Emission coefficient N parameters. When you select Use dark current plus a forward bias I-V data point for the Diode parameterization parameter, you specify the Dark current parameter and a voltage and current measurement point on the diode I-V curve. The block calculates N from these values as follows:

$$N=V_F/(V_t\log (I_F/IS+1))$$

where:

• V_F is the Forward voltage VF parameter value.

• V_t = kT_m1 / q.

• I_F is the Current IF at forward voltage VF parameter value.

The exponential diode model provides the option to include a junction capacitance:

• When you select Fixed or zero junction capacitance for the Parameterization parameter, the capacitance is fixed.

• When you select Use parameters CJO, VJ, M & FC for the Parameterization parameter, the block uses the coefficients CJO, VJ, M, and FC to calculate a junction capacitance that depends on the junction voltage.

• When you select Use C-V curve data points for the Parameterization parameter, the block uses three capacitance values on the C-V capacitance curve to estimate CJO, VJ, and M and uses these values with the specified value of FC to calculate a junction capacitance that depends on the junction voltage. The block calculates CJO, VJ, and M as follows:

  • $$CJ0=C_1{((V_{R2}-V_{R1})/(V_{R2}-V_{R1}{(C_2/C_1)}^{-1/M}))}^M$$

  • $$VJ=-(-V_{R2}{(C_1/C_2)}^{-1/M}+V_{R1})/(1-{(C_1/C_2)}^{-1/M})$$

  • $$M=\log (C_3/C_2)/\log (V_{R2}/V_{R3})$$

  where:

  • V_R1, V_R2, and V_R3 are the values in the Reverse bias voltages [VR1 VR2 VR3] vector.

  • C₁, C₂, and C₃ are the values in the Corresponding capacitances [C1 C2 C3] vector.

  It is not possible to estimate FC reliably from tabulated data, so you must specify its value using the Capacitance coefficient FC parameter. In the absence of suitable data for this parameter, use a typical value of 0.5.

  The reverse bias voltages (defined as positive values) should satisfy V_R3 > V_R2 > V_R1. This means that the capacitances should satisfy C₁ > C₂ > C₃ as reverse bias widens the depletion region and hence reduces capacitance. Violating these inequalities results in an error. Voltages V_R2 and V_R3 should be well away from the Junction potential VJ. Voltage V_R1 should be less than the Junction potential VJ, with a typical value for V_R1 being 0.1 V.

The voltage-dependent junction is defined in terms of the capacitor charge storage Q_j as:

• For V < FC·VJ:

  $$Q_j=CJ0\cdot (VJ/(M-1))\cdot ({(1-V/VJ)}^{1-M}-1)$$

• For V ≥ FC·VJ:

  $$Q_j=CJ0\cdot F_1+(CJ0/F_2)\cdot (F_3\cdot (V-FC\cdot VJ)+0.5(M/VJ)\cdot (V^2-{(FC\cdot VJ)}^2))$$

where:

• $$F_1=(VJ/(1-M))\cdot (1-{(1-FC)}^{1-M}))$$

• $$F_2={(1-FC)}^{1+M}))$$

• $$F_3=1-FC\cdot (1+M)$$

These equations are the same as used in [2], except that the temperature dependence of VJ and FC is not modeled. This model does not include the diffusion capacitance term that affects performance for high frequency switching applications.

The Photodiode block contains several options for modeling the dependence of the diode current-voltage relationship on the temperature during simulation. Temperature dependence of the junction capacitance is not modeled, this being a much smaller effect. For details, see the Diode reference page.

Thermal Port

The block has an optional thermal port, hidden by default. To expose the thermal port, right-click the block in your model, and then from the context menu select Simscape > Block choices > Show thermal port. This action displays the thermal port H on the block icon, and exposes the Thermal Port parameters.

Use the thermal port to simulate the effects of generated heat and device temperature. For more information on using thermal ports and on the Thermal Port parameters, see Simulating Thermal Effects in Semiconductors.

Variables

Use the Variables section of the block interface to set the priority and initial target values for the block variables prior to simulation. For more information, see Set Priority and Initial Target for Block Variables.

Assumptions and Limitations

• When you select Use dark current plus a forward bias I-V curve data point for the Diode parameterization parameter, choose a voltage near the diode turn-on voltage. Typically this will be in the range from 0.05 to 1 Volt. Using a value outside of this region may lead to a poor estimate for N.

• You may need to use nonzero ohmic resistance and junction capacitance values to prevent numerical simulation issues, but the simulation may run faster with these values set to zero.

Ports

Output

W — Incident flux

physical signal

Physical signal port associated with the incident flux.

Conserving

+ — Positive terminal

electrical

Electrical conserving port associated with the anode.

- — Negative terminal

electrical

Electrical conserving port associated with the cathode.

Parameters

Main

Sensitivity parameterization — Sensitivity parameterization

Specify measured current for given flux density (default) | Specify current per unit flux density

Select one of the following methods for sensitivity parameterization:

• Specify measured current for given flux density — Specify the measured current and the corresponding flux density. This is the default method.

• Specify current per unit flux density — Specify the device sensitivity directly.

Measured current — Measured current

25 uA (default)

The current the block uses to calculate the device sensitivity.

Dependencies

This parameter is visible only when you select Specify measured current for given flux density for the Sensitivity parameterization parameter.

Flux density — Flux density

5 W/m^2 (default)

The flux density the block uses to calculate the device sensitivity.

Dependencies

This parameter is visible only when you select Specify measured current for given flux density for the Sensitivity parameterization parameter.

Device sensitivity — Device sensitivity

5e-06 m^2*A/W (default)

The current per unit flux density.

Dependencies

This parameter is visible only when you select Specify current per unit flux density for the Sensitivity parameterization parameter.

Diode parameterization — Diode parameterization

Use dark current plus a forward bias I-V data point (default) | Use dark current and N

Select one of the following methods for diode model parameterization:

• Use dark current plus a forward bias I-V data point — Specify the dark current and a point on the diode I-V curve. This is the default method.

• Use dark current and N — Specify dark current and emission coefficient.

Current I1 — Current at the forward-biased point

0.1 A (default)

The current at the forward-biased point on the diode I-V curve that the block uses to calculate IS and N.

Dependencies

This parameter is visible only when you select Use dark current plus a forward bias I-V data point for the Diode parameterization parameter.

Voltage V1 — Voltage at the forward-biased point

1.3 V (default)

The corresponding voltage at the forward-biased point on the diode I-V curve that the block uses to calculate IS and N.

Dependencies

This parameter is visible only when you select Use dark current plus a forward bias I-V data point for the Diode parameterization parameter.

Dark current — Dark current

5e-9 A (default)

The current through the diode when it is not exposed to light.

Emission coefficient, N — Emission coefficient

3 (default)

The diode emission coefficient or ideality factor.

Dependencies

This parameter is visible only when you select Use dark current and N for the Diode parameterization parameter.

Ohmic resistance, RS — Series diode connection resistance

0.1 Ohm (default)

The series diode connection resistance.

Measurement temperature — Measurement temperature

25 degC (default)

The temperature at which the I-V curve or dark current was measured.

Junction Capacitance

Parameterization — Junction capacitance parameterization

Fixed or zero junction capacitance (default) | Use C-V curve data points | Use parameters CJ0, VJ, M & FC

Select one of the following options for modeling the junction capacitance:

• Fixed or zero junction capacitance — Model the junction capacitance as a fixed value.

• Use C-V curve data points — Specify measured data at three points on the diode C-V curve.

• Use parameters CJ0, VJ, M & FC — Specify zero-bias junction capacitance, junction potential, grading coefficient, and forward-bias depletion capacitance coefficient.

Junction capacitance — Junction capacitance

60 pF (default)

Fixed value of the junction capacitance.

Dependencies

This parameter is visible only when you select Fixed or zero junction capacitance for the Parameterization parameter.

Zero-bias junction capacitance, CJ0 — Zero-bias junction capacitance

60 pF (default)

Value of the capacitance placed in parallel with the exponential diode term.

Dependencies

This parameter is visible only when you select Use parameters CJ0, VJ, M & FC for the Parameterization parameter.

Reverse bias voltages [VR1 VR2 VR3] — Reverse bias voltages

[ 0.1 10 100 ] V (default)

A vector of the reverse bias voltage values at the three points on the diode C-V curve that the block uses to calculate CJ0, VJ, and M.

Dependencies

This parameter is visible only when you select Use C-V curve data points for the Parameterization parameter.

Corresponding capacitances [C1 C2 C3] — Corresponding capacitances

[ 45 3 6 ] pF (default)

A vector of the capacitance values at the three points on the diode C-V curve that the block uses to calculate CJ0, VJ, and M.

Dependencies

This parameter is visible only when you select Use C-V curve data points for the Parameterization parameter.

Junction potential, VJ — Junction potential

1 V (default)

Junction potential.

Dependencies

This parameter is visible only when you select Use parameters CJ0, VJ, M & FC for the Parameterization parameter.

Grading coefficient, M — Grading coefficient

0.5 (default)

The grading coefficient.

Dependencies

This parameter is visible only when you select Use parameters CJ0, VJ, M & FC for the Parameterization parameter.

Capacitance coefficient, FC — Capacitance coefficient

0.5 (default)

Fitting coefficient that quantifies the decrease of the depletion capacitance with applied voltage.

Dependencies

This parameter is visible only when you select Use C-V curve data points or Use parameters CJ0, VJ, M & FC for the Parameterization parameter.

Temperature Dependence

Parameterization — Temperature dependence parameterization

None — Simulate at parameter measurement temperature (default) | Use an I-V data point at second measurement temperature T2 | Specify saturation current at second measurement temperature T2 | Specify the energy gap EG

Select one of the following methods for temperature dependence parameterization:

• None — Simulate at parameter measurement temperature — Temperature dependence is not modeled, or the model is simulated at the measurement temperature T_m1 (as specified by the Measurement temperature parameter on the Main tab). This is the default method.

• Use an I-V data point at second measurement temperature T2 — If you select this option, you specify a second measurement temperature T_m2, and the current and voltage values at this temperature. The model uses these values, along with the parameter values at the first measurement temperature T_m1, to calculate the energy gap value.

• Specify saturation current at second measurement temperature T2 — If you select this option, you specify a second measurement temperature T_m2, and saturation current value at this temperature. The model uses these values, along with the parameter values at the first measurement temperature T_m1, to calculate the energy gap value.

• Specify the energy gap EG — Specify the energy gap value directly.

Current I1 at second measurement temperature — Current I1 at second measurement temperature

0.07 A (default)

Specify the diode current I1 value when the voltage is V1 at the second measurement temperature.

Dependencies

This parameter is visible only when you select Use an I-V data point at second measurement temperature T2 for the Parameterization parameter.

Voltage V1 at second measurement temperature — Voltage V1 at second measurement temperature

1.3 V (default)

Specify the diode voltage V1 value when the current is I1 at the second measurement temperature.

Dependencies

This parameter is visible only when you select Use an I-V data point at second measurement temperature T2 for the Parameterization parameter.

Saturation current, IS, at second measurement temperature — Saturation current, IS, at second measurement temperature

2.5e-7 A (default)

Specify the saturation current IS value at the second measurement temperature.

Dependencies

This parameter is visible only when you select Specify saturation current at second measurement temperature T2 for the Parameterization parameter.

Second measurement temperature — Second measurement temperature

125 degC (default)

Specify the value for the second measurement temperature.

Dependencies

This parameter is visible only when you select Use an I-V data point at second measurement temperature T2 or Specify saturation current at second measurement temperature T2 for the Parameterization parameter.

Energy gap parameterization — Energy gap parameterization

Use nominal value for silicon (EG=1.11eV) (default) | Use nominal value for 4H-SiC silicon carbide (EG=3.23eV) | Use nominal value for 6H-SiC silicon carbide (EG=3.00eV) | Use nominal value for germanium (EG=0.67eV) | Use nominal value for gallium arsenide (EG=1.43eV) | Use nominal value for selenium (EG=1.74eV) | Use nominal value for Schottky barrier diodes (EG=0.69eV) | Specify a custom value

Select a value for the energy gap from a list of predetermined options, or specify a custom value:

• Use nominal value for silicon (EG=1.11eV) — This is the default.

• Use nominal value for 4H-SiC silicon carbide (EG=3.23eV)

• Use nominal value for 6H-SiC silicon carbide (EG=3.00eV)

• Use nominal value for germanium (EG=0.67eV)

• Use nominal value for gallium arsenide (EG=1.43eV)

• Use nominal value for selenium (EG=1.74eV)

• Use nominal value for Schottky barrier diodes (EG=0.69eV)

• Specify a custom value — If you select this option, the Energy gap, EG parameter appears in the dialog box, to let you specify a custom value for EG.

Dependencies

This parameter is visible only when you select Specify the energy gap EG for the Parameterization parameter.

Energy gap, EG — Energy gap

1.11 eV (default)

Specify a custom value for the energy gap, EG.

Dependencies

This parameter is visible only when you select Specify a custom value for the Energy gap parameterization parameter.

Saturation current temperature exponent parameterization — Saturation current temperature exponent parameterization

Use nominal value for pn-junction diode (XTI=3) (default) | Use nominal value for Schottky barrier diode (XTI=2) | Specify a custom value

Select one of the following options to specify the saturation current temperature exponent value:

• Use nominal value for pn-junction diode (XTI=3) — This is the default.

• Use nominal value for Schottky barrier diode (XTI=2)

• Specify a custom value — If you select this option, the Saturation current temperature exponent, XTI parameter appears in the dialog box, to let you specify a custom value for XTI.

Saturation current temperature exponent, XTI — Saturation current temperature exponent

3 (default)

Specify a custom value for the saturation current temperature exponent, XTI.

Dependencies

This parameter is visible only when you select Specify a custom value for the Saturation current temperature exponent parameterization parameter.

Device simulation temperature — Device simulation temperature

25 degC (default)

Specify the value for the temperature T_s, at which the device is to be simulated.

Model Examples

Microcontroller with GPIO, ADC and DAC Connections

Model the interface between a microcontroller unit (MCU) and a physical system. Here the microcontroller's GPIO, ADC and DAC connections are used to control a DC motor and connected load with limited angle travel. Load angle measurement is via a potentiometer sensor. This measurement is calibrated by initially ramping the rotor position until the photodiode detects the zero-angle light pulse from the LED. Once calibrated the MCU commands a 0.1Hz 45 degree amplitude sinusoid.

References

[1] H. Ahmed and P.J. Spreadbury. Analogue and digital electronics for engineers. 2nd Edition, Cambridge University Press, 1984.

[2] G. Massobrio and P. Antognetti. Semiconductor Device Modeling with SPICE. 2nd Edition, McGraw-Hill, 1993.

Extended Capabilities

C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.